Nexperia PUMH17F

Nexperia · Transistors (BJTs) · MPN PUMH17F

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Specifications

DC Current Gain60
Output Voltage(VO(on))-
Input Resistor47kΩ
Number2 NPN (Pre-Biased)
Resistor Ratio0.47
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)2.7V
Current - Collector(Ic)100mA
Voltage - Input(Max)(VI(off))1.7V
Collector - Emitter Voltage VCEO50V
Operating Temperature-65℃~+150℃

Technical details

60 2 NPN (Pre-Biased) 200mW 100mA 50V SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS

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