Nexperia PUMH15,115

Nexperia · Transistors (BJTs) · MPN PUMH15,115

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Specifications

DC Current Gain30
Output Voltage(VO(on))-
Input Resistor4.7kΩ
Number2 NPN (Pre-Biased)
Resistor Ratio1
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))500mV
Current - Collector(Ic)100mA
Input Voltage (VI(on)@Ic,Vce)1.9V
Collector - Emitter Voltage VCEO50V
Operating Temperature-65℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 300mW Surface Mount TSSOP-6(SOT-363)

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