Nexperia PUMH11-QX

Nexperia · Transistors (BJTs) · MPN PUMH11-QX

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)230MHz
DC Current Gain30
Emitter-Base Voltage VEBO10V
Vce Saturation(VCE(sat))150mV
Resistor Ratio1
Pd - Power Dissipation300mW
Current - Collector(Ic)100mA
Input Voltage (VI(on)@Ic,Vce)2.5V@10mA,0.3V
Voltage - Input(Max)(VI(off))800mV@100uA,5V
Collector - Emitter Voltage VCEO50V
typeNPN

Technical details

30 300mW 100mA 50V 2 NPN (Pre-Biased) TSSOP-6(SOT-363) Bipolar Transistor Arrays, Pre-Biased RoHS

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