Nexperia PUMH10,125

Nexperia · Transistors (BJTs) · MPN PUMH10,125

No reviews yet — be the first to review Nexperia PUMH10,125.

Specifications

DC Current Gain100
Output Voltage(VO(on))-
Input Resistor2.2kΩ
Number2 NPN (Pre-Biased)
Resistor Ratio21
Pd - Power Dissipation300mW
Input Voltage (VI(on)@Ic,Vce)750mV@5mA,0.3V
Voltage - Input(Max)(VI(off))650mV@100uA,5V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-65℃~+150℃

Technical details

100 2 NPN (Pre-Biased) 300mW 100mA 50V SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS

Related Transistors (BJTs)