Nexperia PUMH1-QX

Nexperia · Transistors (BJTs) · MPN PUMH1-QX

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)230MHz
DC Current Gain60
Emitter-Base Voltage VEBO10V
Vce Saturation(VCE(sat))150mV
Input Resistor22kΩ
Resistor Ratio1
Pd - Power Dissipation300mW
Current - Collector(Ic)100mA
Voltage - Input(Max)(VI(off))800mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)2.5V@5mA,0.3V
Collector - Emitter Voltage VCEO50V

Technical details

60 300mW 100mA 50V 2 NPN (Pre-Biased) TSSOP-6 Bipolar Transistor Arrays, Pre-Biased RoHS

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