Nexperia PUMF11,115

Nexperia · Transistors (BJTs) · MPN PUMF11,115

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain80
Operating Temperature-65℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor22kΩ
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Resistor Ratio2.1
Pd - Power Dissipation300mW
Input Voltage (VI(on)@Ic,Vce)1.1V
Voltage - Input(Max)(VI(off))900mV

Technical details

50V 80 100mA 1 NPN Pre-Biased, 1 PNP Pre-Biased 300mW SOT-363 Single, Pre-Biased Bipolar Transistors RoHS

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