Nexperia · Transistors (BJTs) · MPN PUMD9-QX
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| Current - Collector Cutoff | 100nA |
|---|---|
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 100 |
| Vce Saturation(VCE(sat)) | 100mV |
| type | NPN+PNP |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Resistor Ratio | 4.7 |
| Pd - Power Dissipation | 300mW |
| Current - Collector(Ic) | 100mA |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V@1mA,0.3V |
| Collector - Emitter Voltage VCEO | 50V |
100 1 NPN Pre-Biased, 1 PNP Pre-Biased 300mW 100mA 50V TSSOP-6 Bipolar Transistor Arrays, Pre-Biased RoHS