Nexperia PUMD9,165

Nexperia · Transistors (BJTs) · MPN PUMD9,165

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Specifications

DC Current Gain100
Output Voltage(VO(on))-
Input Resistor10kΩ
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Resistor Ratio4.7
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))700mV
Current - Collector(Ic)100mA
Input Voltage (VI(on)@Ic,Vce)-
Collector - Emitter Voltage VCEO50V
Operating Temperature-65℃~+150℃

Technical details

100 1 NPN Pre-Biased, 1 PNP Pre-Biased 300mW 100mA 50V SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS

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