Nexperia PUMD48,115

Nexperia · Transistors (BJTs) · MPN PUMD48,115

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Specifications

DC Current Gain80
Input Resistor47kΩ
Resistor Ratio1
Number-
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))1.2V
Input Voltage (VI(on)@Ic,Vce)1.6V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-65℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount TSSOP-6(SOT-363)

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