Nexperia · Transistors (BJTs) · MPN PUMD18,115
No reviews yet — be the first to review Nexperia PUMD18,115.
| DC Current Gain | 50 |
|---|---|
| Output Voltage(VO(on)) | - |
| Input Resistor | 4.7kΩ |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Resistor Ratio | 2.1 |
| Pd - Power Dissipation | 300mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.5V |
| Current - Collector(Ic) | 100mA |
| Voltage - Input(Max)(VI(off)) | 900mV |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -65℃~+150℃ |
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP Pre-Biased 50V 100mA 300mW Surface Mount SOT-363