Nexperia PUMD13/1F

Nexperia · Transistors (BJTs) · MPN PUMD13/1F

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Specifications

Input Resistor6.1kΩ
Resistor Ratio12
Pd - Power Dissipation200mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-65℃~+150℃

Technical details

200mW 100mA 50V SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS

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