Nexperia PUMD10-QX

Nexperia · Transistors (BJTs) · MPN PUMD10-QX

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
DC Current Gain100
Emitter-Base Voltage VEBO5V
Vce Saturation(VCE(sat))100mV@5mA,0.25mA
Output Voltage(VO(on))-
Input Resistor-
Resistor Ratio21
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)1.1V@5mA,0.3V
Current - Collector(Ic)100mA

Technical details

100 300mW 100mA 50V 1 NPN Pre-Biased, 1 PNP Pre-Biased SC-74 Bipolar Transistor Arrays, Pre-Biased RoHS

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