Nexperia PUMB15,115

Nexperia · Transistors (BJTs) · MPN PUMB15,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz
Emitter-Base Voltage VEBO10V
DC Current Gain30
Vce Saturation(VCE(sat))150mV
Output Voltage(VO(on))-
Input Resistor4.7kΩ
Resistor Ratio1
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))1.1V
Current - Collector(Ic)100mA
Input Voltage (VI(on)@Ic,Vce)2.5V@20mA,300mV

Technical details

Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased Transistors 50V 100mA 300mW Surface Mount SOT-363

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