Nexperia PUMB10F

Nexperia · Transistors (BJTs) · MPN PUMB10F

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Specifications

DC Current Gain100
Output Voltage(VO(on))-
Input Resistor2.2kΩ
Resistor Ratio21
Number2 PNP Pre-Biased Transistors
Pd - Power Dissipation300mW
Input Voltage (VI(on)@Ic,Vce)750mV
Current - Collector(Ic)100mA
Voltage - Input(Max)(VI(off))600mV
Collector - Emitter Voltage VCEO50V
Operating Temperature-65℃~+150℃

Technical details

100 2 PNP Pre-Biased Transistors 300mW 100mA 50V SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS

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