Nexperia PUMB1,115

Nexperia · Transistors (BJTs) · MPN PUMB1,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz
Emitter-Base Voltage VEBO10V
DC Current Gain60
Vce Saturation(VCE(sat))150mV
Output Voltage(VO(on))-
Input Resistor22kΩ
Resistor Ratio1
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))1.1V
Current - Collector(Ic)100mA
Input Voltage (VI(on)@Ic,Vce)-

Technical details

60 300mW 100mA 50V 2 PNP Pre-Biased Transistors SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS

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