Nexperia PRMD10Z

Nexperia · Transistors (BJTs) · MPN PRMD10Z

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain100
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor2.2kΩ
Resistor Ratio21
Number2 PNP Pre-Biased Transistors
Pd - Power Dissipation480mW
Input Voltage (VI(on)@Ic,Vce)750mV
Voltage - Input(Max)(VI(off))600mV

Technical details

50V 100 100mA 2 PNP Pre-Biased Transistors 480mW DFN1412-6 Single, Pre-Biased Bipolar Transistors RoHS

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