Nexperia · Transistors (BJTs) · MPN PQMH9Z
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 100 |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 10kΩ |
| Number | 2 NPN (Pre-Biased) |
| Resistor Ratio | 4.7 |
| Pd - Power Dissipation | 350mW |
| Voltage - Input(Max)(VI(off)) | 700mV |
| Input Voltage (VI(on)@Ic,Vce) | - |
50V 100 100mA 2 NPN (Pre-Biased) 350mW DFN1010-6 Single, Pre-Biased Bipolar Transistors RoHS