Nexperia PQMH11Z

Nexperia · Transistors (BJTs) · MPN PQMH11Z

No reviews yet — be the first to review Nexperia PQMH11Z.

Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain30
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor10kΩ
Number2 NPN (Pre-Biased)
Resistor Ratio1
Pd - Power Dissipation350mW
Voltage - Input(Max)(VI(off))1.1V
Input Voltage (VI(on)@Ic,Vce)1.8V

Technical details

50V 30 100mA 2 NPN (Pre-Biased) 350mW DFN1010-6 Single, Pre-Biased Bipolar Transistors RoHS

Related Transistors (BJTs)