Nexperia PQMH10Z

Nexperia · Transistors (BJTs) · MPN PQMH10Z

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain100
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor2.2kΩ
Number2 NPN (Pre-Biased)
Resistor Ratio21
Pd - Power Dissipation350mW
Input Voltage (VI(on)@Ic,Vce)750mV
Voltage - Input(Max)(VI(off))600mV

Technical details

Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 350mW Surface Mount DFN1010-6

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