Nexperia · Transistors (BJTs) · MPN PQMD2Z
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 60 |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 22kΩ |
| Number | 2 PNP Pre-Biased Transistors |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 350mW |
| Voltage - Input(Max)(VI(off)) | 1.1V |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V |
50V 60 100mA 2 PNP Pre-Biased Transistors 350mW DFN1010-6 Single, Pre-Biased Bipolar Transistors RoHS