Nexperia PQMD16Z

Nexperia · Transistors (BJTs) · MPN PQMD16Z

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain100
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor4.7kΩ
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Resistor Ratio2.13
Pd - Power Dissipation350mW
Input Voltage (VI(on)@Ic,Vce)-
Voltage - Input(Max)(VI(off))600mV

Technical details

50V 100 100mA 1 NPN Pre-Biased, 1 PNP Pre-Biased 350mW DFN1010-6 Single, Pre-Biased Bipolar Transistors RoHS

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