Nexperia · Transistors (BJTs) · MPN PQMD13Z
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| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 100 |
| Vce Saturation(VCE(sat)) | 100mV |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 4.7kΩ |
| Resistor Ratio | 10 |
| Pd - Power Dissipation | 350mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V@5mA,300mV |
50V 100 100mA 350mW NPN+PNP 1 NPN Pre-Biased, 1 PNP Pre-Biased SOT1216 Single, Pre-Biased Bipolar Transistors RoHS