Nexperia PQMD12Z

Nexperia · Transistors (BJTs) · MPN PQMD12Z

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain80
Operating Temperature-
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor47kΩ
Number2 PNP Pre-Biased Transistors
Resistor Ratio1
Pd - Power Dissipation350mW
Input Voltage (VI(on)@Ic,Vce)1.6V@2mA,0.3V
Voltage - Input(Max)(VI(off))1.2V@100uA,5V

Technical details

50V 80 100mA 2 PNP Pre-Biased Transistors 350mW SOT1216 Single, Pre-Biased Bipolar Transistors RoHS

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