Nexperia PMST5089,115

Nexperia · Transistors (BJTs) · MPN PMST5089,115

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO4.5V
DC Current Gain400
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 25V 100mA 100MHz 200mW Surface Mount SOT-323

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