Nexperia PMBTA56,215

Nexperia · Transistors (BJTs) · MPN PMBTA56,215

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation250mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

Bipolar (BJT) Transistor PNP 80V 500mA 50MHz 250mW Surface Mount SOT-23

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