Nexperia PMBT5550,215

Nexperia · Transistors (BJTs) · MPN PMBT5550,215

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO140V
Emitter-Base Voltage VEBO6V
DC Current Gain60
Pd - Power Dissipation250mW
Number1 NPN
typeNPN
Current - Collector(Ic)300mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

Bipolar (BJT) Transistor NPN 140V 300mA 300MHz 250mW Surface Mount SOT-23

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