Nexperia PMBT3946YPN-QH

Nexperia · Transistors (BJTs) · MPN PMBT3946YPN-QH

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Specifications

Current - Collector Cutoff50nA
Collector - Emitter Voltage VCEO40V
Pd - Power Dissipation350mW
Emitter-Base Voltage VEBO6V
Transition frequency(fT)300MHz
Vce Saturation(VCE(sat))300mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Technical details

40V 350mW NPN+PNP 200mA TSSOP-6 Bipolar Transistor Arrays RoHS

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