Nexperia PMBT3946YPN,115

Nexperia · Transistors (BJTs) · MPN PMBT3946YPN,115

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Specifications

Current - Collector Cutoff50nA
DC Current Gain100
Pd - Power Dissipation350mW
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)300MHz
Vce Saturation(VCE(sat))400mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 40V 200mA 300MHz 350mW TSSOP-6(SOT-363)

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