Nexperia PIMZ2,125

Nexperia · Transistors (BJTs) · MPN PIMZ2,125

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Specifications

Current - Collector Cutoff100nA
DC Current Gain120
Pd - Power Dissipation300mW
Collector - Emitter Voltage VCEO50V
Transition frequency(fT)190MHz;100MHz
Vce Saturation(VCE(sat))500mV
typeNPN+PNP
Current - Collector(Ic)150mA
Operating Temperature-

Technical details

120 300mW 50V NPN+PNP 150mA SOT-457 Bipolar Transistor Arrays RoHS

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