Nexperia PIMD3,115

Nexperia · Transistors (BJTs) · MPN PIMD3,115

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Specifications

DC Current Gain30
Input Resistor10kΩ
Resistor Ratio1
Number-
Pd - Power Dissipation400mW
Voltage - Input(Max)(VI(off))1.1V
Input Voltage (VI(on)@Ic,Vce)1.8V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-65℃~+150℃

Technical details

30 400mW 100mA 50V SOT-457 Bipolar Transistor Arrays, Pre-Biased RoHS

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