Nexperia · Transistors (BJTs) · MPN PIMD2,125
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| DC Current Gain | 60 |
|---|---|
| Output Voltage(VO(on)) | - |
| Input Resistor | 28.6kΩ |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Resistor Ratio | 1.2 |
| Pd - Power Dissipation | 400mW |
| Voltage - Input(Max)(VI(off)) | 1.1V |
| Current - Collector(Ic) | 100mA |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
60 1 NPN Pre-Biased, 1 PNP Pre-Biased 400mW 100mA 50V SOT-457 Bipolar Transistor Arrays, Pre-Biased RoHS