Nexperia PIMC31,115

Nexperia · Transistors (BJTs) · MPN PIMC31,115

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Specifications

DC Current Gain70
Output Voltage(VO(on))-
Input Resistor1.3kΩ
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Resistor Ratio11
Pd - Power Dissipation420mW
Input Voltage (VI(on)@Ic,Vce)400mV
Current - Collector(Ic)500mA
Voltage - Input(Max)(VI(off))600mV
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP Pre-Biased 50V 500mA 420mW Surface Mount SOT-457

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