Nexperia PEMH9,315

Nexperia · Transistors (BJTs) · MPN PEMH9,315

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Specifications

DC Current Gain100
Output Voltage(VO(on))-
Input Resistor13kΩ
Number2 NPN (Pre-Biased)
Resistor Ratio5.7
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))700mV
Current - Collector(Ic)100mA
Input Voltage (VI(on)@Ic,Vce)-
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

100 2 NPN (Pre-Biased) 300mW 100mA 50V SOT-666 Bipolar Transistor Arrays, Pre-Biased RoHS

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