Nexperia · Transistors (BJTs) · MPN PEMH10,115
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 230MHz |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 100 |
| Vce Saturation(VCE(sat)) | 100mV |
| Output Voltage(VO(on)) | - |
| Input Resistor | 2.86kΩ |
| Resistor Ratio | 21 |
| Pd - Power Dissipation | 300mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,300mV |
| Current - Collector(Ic) | 100mA |
| Voltage - Input(Max)(VI(off)) | 600mV |
Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 300mW Surface Mount SOT-666-6