Nexperia PEMD3,315

Nexperia · Transistors (BJTs) · MPN PEMD3,315

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Specifications

DC Current Gain30
Output Voltage(VO(on))-
Input Resistor13kΩ
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Resistor Ratio1.2
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))1.1V
Current - Collector(Ic)100mA
Input Voltage (VI(on)@Ic,Vce)1.8V
Collector - Emitter Voltage VCEO50V
Operating Temperature-65℃~+150℃

Technical details

30 1 NPN Pre-Biased, 1 PNP Pre-Biased 300mW 100mA 50V SOT-666 Bipolar Transistor Arrays, Pre-Biased RoHS

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