Nexperia PEMD17,115

Nexperia · Transistors (BJTs) · MPN PEMD17,115

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Specifications

DC Current Gain60
Output Voltage(VO(on))-
Input Resistor61kΩ
Resistor Ratio0.57
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Pd - Power Dissipation300mW
Input Voltage (VI(on)@Ic,Vce)2.7V
Current - Collector(Ic)100mA
Voltage - Input(Max)(VI(off))1.7V
Collector - Emitter Voltage VCEO50V
Operating Temperature-

Technical details

60 1 NPN Pre-Biased, 1 PNP Pre-Biased 300mW 100mA 50V SOT-666 Bipolar Transistor Arrays, Pre-Biased RoHS

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