Nexperia · Transistors (BJTs) · MPN PEMD13,115
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| Current - Collector Cutoff | 100nA |
|---|---|
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 100 |
| Vce Saturation(VCE(sat)) | 100mV |
| Input Resistor | 4.7kΩ |
| Resistor Ratio | 10 |
| Pd - Power Dissipation | 200mW |
| Voltage - Input(Max)(VI(off)) | 600mV |
| Input Voltage (VI(on)@Ic,Vce) | 1.3V |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
| type | NPN+PNP |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-666-6