Nexperia · Transistors (BJTs) · MPN PEMD12,115
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| Current - Collector Cutoff | 100nA |
|---|---|
| Emitter-Base Voltage VEBO | 10V |
| DC Current Gain | 80 |
| Vce Saturation(VCE(sat)) | 150mV |
| type | NPN+PNP |
| Input Resistor | 61kΩ |
| Resistor Ratio | 1 |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Pd - Power Dissipation | 300mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.6V |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SOT-666-6