Nexperia · Transistors (BJTs) · MPN PEMD10,115
No reviews yet — be the first to review Nexperia PEMD10,115.
| DC Current Gain | 100 |
|---|---|
| Output Voltage(VO(on)) | - |
| Input Resistor | 2.86kΩ |
| Resistor Ratio | 26 |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Pd - Power Dissipation | 300mW |
| Input Voltage (VI(on)@Ic,Vce) | 750mV |
| Current - Collector(Ic) | 100mA |
| Voltage - Input(Max)(VI(off)) | 600mV |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -65℃~+150℃ |
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP Pre-Biased 50V 100mA 300mW Surface Mount SOT-666-6