Nexperia PEMB4,115

Nexperia · Transistors (BJTs) · MPN PEMB4,115

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Specifications

DC Current Gain200
Output Voltage(VO(on))-
Input Resistor10kΩ
Resistor Ratio-
Number2 PNP Pre-Biased Transistors
Pd - Power Dissipation300mW
Input Voltage (VI(on)@Ic,Vce)-
Current - Collector(Ic)100mA
Voltage - Input(Max)(VI(off))-
Collector - Emitter Voltage VCEO50V
Operating Temperature-65℃~+150℃

Technical details

200 2 PNP Pre-Biased Transistors 300mW 100mA 50V SOT-666 Bipolar Transistor Arrays, Pre-Biased RoHS

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