Nexperia · Transistors (BJTs) · MPN PEMB3,115
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | - |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 200 |
| Vce Saturation(VCE(sat)) | 100mV@5mA,0.25mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 4.7kΩ |
| Resistor Ratio | - |
| Pd - Power Dissipation | 300mW |
| Input Voltage (VI(on)@Ic,Vce) | - |
| Current - Collector(Ic) | 100mA |
| Voltage - Input(Max)(VI(off)) | - |
200 300mW 100mA 50V 2 PNP Pre-Biased Transistors SOT-666 Bipolar Transistor Arrays, Pre-Biased RoHS