Nexperia PEMB3,115

Nexperia · Transistors (BJTs) · MPN PEMB3,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Emitter-Base Voltage VEBO5V
DC Current Gain200
Vce Saturation(VCE(sat))100mV@5mA,0.25mA
Output Voltage(VO(on))-
Input Resistor4.7kΩ
Resistor Ratio-
Pd - Power Dissipation300mW
Input Voltage (VI(on)@Ic,Vce)-
Current - Collector(Ic)100mA
Voltage - Input(Max)(VI(off))-

Technical details

200 300mW 100mA 50V 2 PNP Pre-Biased Transistors SOT-666 Bipolar Transistor Arrays, Pre-Biased RoHS

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