Nexperia · Transistors (BJTs) · MPN PEMB11,115
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| DC Current Gain | 30 |
|---|---|
| Output Voltage(VO(on)) | - |
| Input Resistor | 10kΩ |
| Number | 2 PNP Pre-Biased Transistors |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 300mW |
| Voltage - Input(Max)(VI(off)) | 1.1V |
| Current - Collector(Ic) | 100mA |
| Input Voltage (VI(on)@Ic,Vce) | - |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -65℃~+150℃ |
30 2 PNP Pre-Biased Transistors 300mW 100mA 50V SOT-666 Bipolar Transistor Arrays, Pre-Biased RoHS