Nexperia PDTD143XQAZ

Nexperia · Transistors (BJTs) · MPN PDTD143XQAZ

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain70
Operating Temperature-55℃~+150℃
Current - Collector(Ic)500mA
Output Voltage(VO(on))-
Input Resistor4.7kΩ
Number1 NPN (Pre-Biased)
Resistor Ratio2.13
Pd - Power Dissipation940mW
Voltage - Input(Max)(VI(off))1.1V@100uA,5V
Input Voltage (VI(on)@Ic,Vce)2V@20mA,0.3V

Technical details

50V 70 500mA 1 NPN (Pre-Biased) 940mW DFN1010D-3 Single, Pre-Biased Bipolar Transistors RoHS

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