Nexperia PDTD123YT/APGR

Nexperia · Transistors (BJTs) · MPN PDTD123YT/APGR

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain70
Operating Temperature-65℃~+150℃
Current - Collector(Ic)500mA
Resistor Ratio4.55
Pd - Power Dissipation250mW
Input Voltage (VI(on)@Ic,Vce)1.4V@20mA,0.3V
Voltage - Input(Max)(VI(off))1V@100uA,5V

Technical details

50V 70 500mA 250mW Single, Pre-Biased Bipolar Transistors RoHS

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