Nexperia PDTD123YQAZ

Nexperia · Transistors (BJTs) · MPN PDTD123YQAZ

No reviews yet — be the first to review Nexperia PDTD123YQAZ.

Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain70
Operating Temperature-55℃~+150℃
Current - Collector(Ic)500mA
Output Voltage(VO(on))-
Input Resistor2.2kΩ
Number1 NPN (Pre-Biased)
Resistor Ratio4.55
Pd - Power Dissipation575mW
Voltage - Input(Max)(VI(off))1V@100uA,5V
Input Voltage (VI(on)@Ic,Vce)1.4V@20mA,0.3V

Technical details

50V 70 500mA 1 NPN (Pre-Biased) 575mW DFN1010D-3 Single, Pre-Biased Bipolar Transistors RoHS

Related Transistors (BJTs)