Nexperia · Transistors (BJTs) · MPN PDTD123ET,215
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 40 |
| Vce Saturation(VCE(sat)) | 300mV |
| Operating Temperature | - |
| Current - Collector(Ic) | 500mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 2.2kΩ |
| type | NPN |
| Number | 1 NPN (Pre-Biased) |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 250mW |
| Voltage - Input(Max)(VI(off)) | 1.8V@100uA,5V |
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 500mA 250mW Surface Mount SOT-23