Nexperia · Transistors (BJTs) · MPN PDTD123EQAZ
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 40 |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 500mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 2.2kΩ |
| Number | 1 NPN (Pre-Biased) |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 940mW |
| Voltage - Input(Max)(VI(off)) | 2V@20mA,0.3V |
| Input Voltage (VI(on)@Ic,Vce) | 1.8V@100uA,5V |
50V 40 500mA 1 NPN (Pre-Biased) 940mW DFN1010D-3 Single, Pre-Biased Bipolar Transistors RoHS