Nexperia PDTD114ETVL

Nexperia · Transistors (BJTs) · MPN PDTD114ETVL

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain70
Operating Temperature-55℃~+175℃
Current - Collector(Ic)500mA
Output Voltage(VO(on))-
Input Resistor13kΩ
Number1 NPN (Pre-Biased)
Resistor Ratio1.1
Pd - Power Dissipation460mW
Voltage - Input(Max)(VI(off))1.5V@100uA,5V
Input Voltage (VI(on)@Ic,Vce)3V@20mA,0.3V

Technical details

50V 70 500mA 1 NPN (Pre-Biased) 460mW SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

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