Nexperia · Transistors (BJTs) · MPN PDTD114EQAZ
No reviews yet — be the first to review Nexperia PDTD114EQAZ.
| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 70 |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 500mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 10kΩ |
| Number | 1 NPN (Pre-Biased) |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 940mW |
| Voltage - Input(Max)(VI(off)) | 1.05V |
| Input Voltage (VI(on)@Ic,Vce) | 3V@20mA,0.3V |
50V 70 500mA 1 NPN (Pre-Biased) 940mW DFN1010D-3 Single, Pre-Biased Bipolar Transistors RoHS