Nexperia PDTD113ZT-QR

Nexperia · Transistors (BJTs) · MPN PDTD113ZT-QR

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Specifications

Collector - Emitter Voltage VCEO50V
Current - Collector(Ic)500mA
Input Resistor1.3kΩ
Resistor Ratio11
Pd - Power Dissipation250mW
Input Voltage (VI(on)@Ic,Vce)1.4V@20mA,0.3V
Voltage - Input(Max)(VI(off))1V@100uA,5V

Technical details

50V 500mA 250mW SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

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